PE3117C概述：
PE3117C是VDS=-30V,ID=-7A,RDS(ON)<22m?,@VGS=-10V,RDS(ON)<32m?,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
PE3117C的絲印是3117C.PE3117C提供SOT-23-3L封裝.
PE3117C的絲印是3117C.PE3117C提供SOT-23-3L封裝.
The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE3117C特性：
PE3117C特性：
VDS = -30V, ID = -7A
RDS(ON) < 22m? @ VGS=-10V
RDS(ON) < 32m? @VGS=-4.5V
ESD Rating: ≥4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE3117C應(yīng)用：
PE3117C應(yīng)用：
PWM applications
Load switch
Power management
PE3117C典型應(yīng)用及引腳：
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