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PE3117F UDFN2x2-6L

    PE3117F是VDS=-30V,ID=-9.5A，RDS(ON)<22m?，@VGS=-10V，RDS(ON)<32m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE3117F的絲印是3117F.PE3117F提供UDFN2x2-6L封裝.
    The PE3117F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE3117F概述：
        PE3117F是VDS=-30V,ID=-9.5A，RDS(ON)<22m?，@VGS=-10V，RDS(ON)<32m?，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
        PE3117F的絲印是3117F.PE3117F提供UDFN2x2-6L封裝.
        The PE3117F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE3117F特性：
    VDS = -30V, ID = -9.5A
    RDS(ON) < 22m? @ VGS=-10V
    RDS(ON) < 32m? @VGS=-4.5V
    ESD Rating: ≥4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE3117F應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE3117F典型應(yīng)用及引腳：

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