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    PE8209HM1是VDS=18V,ID=10A，RDS(ON)<12m?，@VGS=4.5V，RDS(ON)<13m?，@VGS=3.8V，RDS(ON)<15.5m?，@VGS=3.1V，RDS(ON)<20m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8209HM1的絲印是8209M1.PE8209HM1提供DFN3x3-8L封裝.

    The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

VDS = 18V, ID = 10A

RDS(ON) < 12m? @VGS=4.5V

RDS(ON) < 13m? @VGS=3.8V

RDS(ON) < 15.5m? @VGS=3.1V

RDS(ON) < 20m? @VGS=2.5V

ESD Rating: 4000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package