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    PE8209HN是VDS=18V,ID=9A，RDS(ON)<11m?，@VGS=4.5V，RDS(ON)<12m?，@VGS=3.8V，RDS(ON)<14m?，@VGS=3.1V RDS(ON)<16m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8209HN的絲印是8209.PE8209HN提供DFN2x3-6L封裝.

    The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

VDS = 18V, ID = 9A

RDS(ON) < 11m? @VGS=4.5V

RDS(ON) < 12m?@VGS=3.8V

RDS(ON) < 14m? @VGS=3.1V

RDS(ON) < 16m?@VGS=2.5V

ESD Rating: 4000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package