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單P-MOS

CST30P03D PDFN3333-8L

    CST30P03D是BVDSS=-30V,RDSON=15mΩ,ID=-30A的P-Mosfets.提供PDFN3333-8L封裝。
    The CST30P03D is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    TheCST30P03D meet the RoHS and Gree Product requirement 100% EAS guaranteed with full function reliability approved.
    CST30P03D Description/描述:
        CST30P03D是BVDSS=-30V,RDSON=15mΩ,ID=-30A的快速切換Mosfets.提供PDFN3333-8L封裝。
        The CST30P03D is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        TheCST30P03D meet the RoHS and Gree Product requirement 100% EAS guaranteed with full function reliability approved.

    CST30P03D Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST30P03D Product Summary/產(chǎn)品概覽：
    BVDSS
    RDSON
    ID

    -30V

    15mΩ

    -30A

    CST30P03D Pin Configuration/引腳配置:

    CST30P03D Test Circuit/測(cè)試電路：


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