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CST2301D-S50 SOT23

    CST2301D-S50是VDS=-20V,ID=-3A,RDS(ON)=95m?@VDS=-4.5V,RDS(ON)=110m?@VDS=-2.5V的P溝道MOSFET.
    The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
    The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
    CST2301D-S50概述：
        CST2301D-S50是VDS=-20V,ID=-3A,RDS(ON)=95m?@VDS=-4.5V,RDS(ON)=110m?@VDS=-2.5V的P溝道MOSFET.
        The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
        The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
    CST2301D-S50特性：
    VDS=-20V,ID=-3A
    RDS(ON)=95m?@VDS=-4.5V
    RDS(ON)=110m?@VDS=-2.5V
    Green Device Available 
    Super Low Gate Charge
    Excellent Cdv/dt effect decline
    Advanced high cell density Trench technology
    CST2301D-S50封裝圖：
    請(qǐng)?zhí)峤荒幕拘畔?，發(fā)郵件Sales@ChipSourceTek.com,或者打電話給我們,13823761625(微信同號(hào)),我們將會(huì)盡快與您聯(lián)系！

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