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單P-MOS

HRT60P18X TO-263/TO-25/TO-251/TO-220

    HRT60P18x是VDS=-60V,ID=-65A的P溝道MOSFET.HRT60P18x提供TO-263/TO-25/TO-251/TO-220封裝。
    P-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology.
    This device provides an excellent gate charge and Rds(on),which leads to extremely communication and conduction losses.

    HRT60P18x概述：
        HRT60P18x是VDS=-60V,ID=-65A的P溝道MOSFET.HRT60P18x提供TO-263/TO-25/TO-251/TO-220封裝。
        P-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology.This device provides an excellent gate charge and Rds(on),which leads to extremely communication and conduction losses.

    HRT60P18x特性：
    VDS=-60V,ID=-65A
    RDS(on)18mΩ@VGS=-10V
    Low FOM RDS(on)×Qgd
    100% avalanche tested
    Easy to use/drive
    RoHS compliant

    HRT60P18x應用：
    Load Switch

    HRT60P18x原理圖及封裝圖：

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