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MXN6545概述：
    MXN6545是VDS=-30V，ID=-50A，RDS(ON)(Typ.)=4.4m?,@VGS=-10V的P-Channel MOSFET.MXN6545提供DFN5*6-8L封裝.
    The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be Used in a wide variety of applications.

MXN6545特性：
VDS =-30V，ID =-50A
RDS(ON) (Typ.)= 4.4m ? @ VGS=-10V

High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability

MXN6545應(yīng)用：
Battery and loading switching

MXN6545典型應(yīng)用及引腳圖：