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    PE7165G是VDS=-18V,ID=-65A，RDS(ON)<4mΩ，@VGS=-4.5V，RDS(ON)<5.6mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7165G的絲印是PE7165G.PE7165G提供DFN5x6-8L封裝.

    The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE7165G特性：

VDS = -18V, ID = -65A

RDS(ON) < 4mΩ @ VGS=-4.5V

RDS(ON) < 5.6mΩ @VGS=-2.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE7165G應(yīng)用：

PWM applications

Load switch

Power management

PE7165G典型應(yīng)用及引腳：