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單P-MOS

PE7150M PDFN3.3*3.3-8L

    PE7150M是VDS=-18V,ID=-50A，RDS(ON)<6.3mΩ，@VGS=-4.5V，RDS(ON)<7.0mΩ，@VGS=-3.8V，RDS(ON)< 8.1mΩ，@VGS=-3.1V，RDS(ON)<9.0mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7150M的絲印是PE7150M.PE7150M提供PDFN3.3*3.3-8L封裝.
    The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7150M概述：
        PE7150M是VDS=-18V,ID=-50A，RDS(ON)<6.3mΩ，@VGS=-4.5V，RDS(ON)<7.0mΩ，@VGS=-3.8V，RDS(ON)< 8.1mΩ，@VGS=-3.1V，RDS(ON)<9.0mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7150M的絲印是PE7150M.PE7150M提供PDFN3.3*3.3-8L封裝.
        The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7150M特性：
    VDS = -18V, ID = -50A
    RDS(ON) < 6.3mΩ @ VGS=-4.5V
    RDS(ON) < 7.0mΩ @ VGS=-3.8V
    RDS(ON) < 8.1mΩ @ VGS=-3.1V
    RDS(ON) < 9.0mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package
    Good stability and uniformity with high EAS 

    PE7150M應(yīng)用：
    PWM applications
    Load switch
    Power management
    Battery protection

    PE7150M典型應(yīng)用及引腳：

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