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PE7190G DFN5x6-8L

    PE7190G是VDS=-18V,ID=-90A，RDS(ON)<2.4mΩ，@VGS=-4.5V，RDS(ON)<3.5mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7190G的絲印是PE7190G.PE7190G提供DFN5x6-8L封裝.
    The PE7190G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7190G概述：
        PE7190G是VDS=-18V,ID=-90A，RDS(ON)<2.4mΩ，@VGS=-4.5V，RDS(ON)<3.5mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7190G的絲印是PE7190G.PE7190G提供DFN5x6-8L封裝.
        The PE7190G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7190G特性：
    VDS = -18V, ID = -90A
    RDS(ON) < 2.4mΩ @ VGS=-4.5V
    RDS(ON) < 3.5mΩ @ VGS=-2.5V
    High Power and current handing capability
    Good stability and uniformity with high EAS
    Surface Mount Package

    PE7190G應(yīng)用：
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE7190G典型應(yīng)用及引腳：

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