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單P-MOS

PE7209M PDFN3.3x3.3-8L

    PE7209M是VDS=-20V,ID=-25A，RDS(ON)<16mΩ，@VGS=-4.5V，RDS(ON)<22mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7209M的絲印是PE7209M.PE7209M提供PDFN3.3x3.3-8L封裝.
    The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7209M概述：
        PE7209M是VDS=-20V,ID=-25A，RDS(ON)<16mΩ，@VGS=-4.5V，RDS(ON)<22mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7209M的絲印是PE7209M.PE7209M提供PDFN3.3x3.3-8L封裝.
        The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7209M特性：
    VDS = -20V, ID = -25A
    RDS(ON) < 16mΩ @ VGS=-4.5V
    RDS(ON) < 22mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE7209M應(yīng)用：
    PWM applications
    Load switch
    Power management
    Battery protection

    PE7209M典型應(yīng)用及引腳：

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