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CST2012S SOP8

    CST2012S是BVDSS=20V,RDSON=8mΩ,ID=12A的N溝道快速切換mosfets。提供SOP8封裝。
    The CST2012S is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The CST2012S meet the RoHS and Green Product requirement with full function reliability approved.
    CST2012S Description/描述:
        CST2012S是BVDSS=20V,RDSON=8mΩ,ID=12A的N溝道快速切換mosfets。提供SOP8封裝。
        The CST2012S is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The CST2012S meet the RoHS and Green Product requirement with full function reliability approved.

    CST2012S Features/特性:
    Green Device Available
    Super Low Gate Charge
    Excellent Cdv/dt effect decline
    Advanced high cell density Trench technology

    CST2012S Product Summary/產(chǎn)品概覽：
    BVDSS
    RDSON
    ID
    20V
    8mΩ
    12.0A

    CST2012S PDFN5X6 Pin Configuration/引腳配置：



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