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CST80N02F PDFN5060-8L

    CST80N02F是BVDSS=20V,RDSON=3.5mΩ,ID=80A的N溝道Mosfet。提供PDFN5060-8L封裝。
    The CST80N02F is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST80N02Fmeet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST80N02F Description/描述:
        CST80N02F是BVDSS=20V,RDSON=3.5mΩ,ID=80A的N溝道Mosfet。提供PDFN5060-8L封裝。
        The CST80N02F is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST80N02Fmeet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST80N02F Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST80N02F Product Summary:

    BVDSS
    RDSON
    ID

    20V

    3.5 mΩ

    80A

    CST80N02F PDFN5060-8L Pin Configuration:
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