HRH5N50BDNx Description/概述：
HRH5N50BDNx是VDS=500V,ID=2.5A,RDSON≤2.5Ω @Vgs=10V的N通道平面MOSFET。提供TO-252,TO-220F,TO220,TO251封裝。
500V N-Channel Planar MOSFET
HRH5N50BDNx is HRM high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies.
HRH5N50BDNx Features/特性：
RDSON≤2.5Ω @Vgs=10V, Id=2.5A
Ultra Low gate Charge(typical 12.5nC)
Low Crss (typical 3.9pF)
Fast switching capability
100% avalanche tested
Improved dv/dt capability
HRH5N50BDNx Applications/應(yīng)用：
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC) (PFC)
Charger
HRH5N50BDNx Package：
HRH5N50BDNx Device Marking and Package Information：
|
Device
|
Package
|
Marking
|
|
HRH5N50BDND
|
TO-252
|
H5N50BDND
|
|
HRH5N50BDNF
|
TO-220F
|
H5N50BDNF
|
|
HRH5N50BDNP
|
TO-220
|
H5N50BDNP
|
|
HRH5N50BDNU
|
TO-251
|
H5N50BDNU
|
HRH5N50BDNx Gate Charge Test Circuit：
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