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SIO2622E SOT-23

     SIO2622E是VDS=20V，ID=6A，RDS(ON)(m?)Typ17@VGS=4.5V，RDS(ON)(m?)Typ21@VGS=2.5V的N溝道MOSFET.SIO2622E的絲印是2622E.SIO2622E提供SOT-23封裝.
    The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
    This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
    SIO2622E概述：
        SIO2622E是VDS=20V，ID=6A，RDS(ON)(m?)Typ17@VGS=4.5V，RDS(ON)(m?)Typ21@VGS=2.5V的N溝道MOSFET.SIO2622E的絲印是2622E.SIO2622E提供SOT-23封裝.
        The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

    SIO2622E特性：
    VDS=20V ID=6A
    RDS(ON)(m?)Typ17@VGS=4.5V
    RDS(ON)(m?)Typ21@VGS=2.5V
    ESD Rating:2000VBM
    提供SOT-23封裝

    SIO2622E原理圖及封裝圖：
    請?zhí)峤荒幕拘畔ⅲl(fā)郵件Sales@ChipSourceTek.com,或者打電話給我們,13823761625(微信同號),我們將會盡快與您聯(lián)系！

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