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單N-MOS

MXN3016M PDFN3X3-8L

    MXN3016M是VDS=30V，ID=45A，@VGS=10V，RDS(ON)(Typ.)=5m?，@VGS=4.5V，RDS(ON)(Typ.)=7m?的N溝道MOSFET.
    MXN3016M的絲印是3016M.MXN3016M提供PDFN3X3-8L封裝.
    The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . 
    This device can be used for a variety of applications

    MXN3016M概述：
        MXN3016M是VDS=30V，ID=45A，@VGS=10V，RDS(ON)(Typ.)=5m?，@VGS=4.5V，RDS(ON)(Typ.)=7m?的N溝道MOSFET.
        MXN3016M的絲印是3016M.MXN3016M提供PDFN3X3-8L封裝.
        The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device can be used for a variety of applications

    MXN3016M特性：
    VDS =30V，ID =45A
    @VGS=10V RDS(ON)(Typ.)=5m?
    @VGS=4.5V RDS(ON)(Typ.)=7m?
    High density cell design for ultra low Rdson
    Fully characterized Avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation
    Special process technology for high ESD capability

    MXN3016M應(yīng)用：
    DC/DC Converters in Computing, Servers, and POL
    Isolated DC/DC Converters in Telecom and Industrial
    Uninterruptible Power Supply

    MXN3016M典型應(yīng)用及引腳圖：

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