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單N-MOS

PE15N10 TO-252-2L

    PE15N10是VDS>100V,ID =15A,RDS(ON)<100m?@VGS=10V的N溝道增強(qiáng)型功率MOSFET.
    PE15N10絲?。?5N10,PE15N10提供TO-252-2L封裝.
    The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 
    PE15N10概述：
        PE15N10是VDS>100V,ID =15A,RDS(ON)<100m?@VGS=10V的N溝道增強(qiáng)型功率MOSFET.
        PE15N10絲?。?5N10,PE15N10提供TO-252-2L封裝.
        The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 

    PE15N10特性：
    VDS>100V,ID =15A
    RDS(ON)<100m?@VGS=10V
    High density cell design for ultra low Rdson
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation
    Special process technology for high ESD capability

    PE15N10應(yīng)用:
    Power switching application
    Hard switched and high frequency circuits

    PE15N10典型應(yīng)用及引腳圖：

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