MXN3050G概述:
MXN3050G是VDS=30V,ID=50A,RDS(ON)<9m?,@VGS=10V,RDS(ON)<13m?,@VGS=-4.5V的N-Channel MOSFET.MXN3050G提供DFN5*6-8L封裝.
The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.
MXN3050G特性:
VDS = 30V,ID = 50A
RDS(ON) < 9m? @ VGS=10V
RDS(ON) < 13m? @ VGS=-4.5V
Low density cell desig
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
MXN3050G應(yīng)用:
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
MXN3050G典型應(yīng)用及引腳: