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MXN3050G DFN5*6-8L

    MXN3050G是VDS=30V,ID=50A,RDS(ON)<9m?,@VGS=10V,RDS(ON)<13m?,@VGS=-4.5V的N-Channel MOSFET.
    MXN3050G提供DFN5*6-8L封裝.
    The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.
    It can be used in awide variety Of applications.

    MXN3050G概述:
        MXN3050G是VDS=30V,ID=50A,RDS(ON)<9m?,@VGS=10V,RDS(ON)<13m?,@VGS=-4.5V的N-Channel MOSFET.MXN3050G提供DFN5*6-8L封裝.
        The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.

    MXN3050G特性:

    VDS = 30V,ID = 50A
    RDS(ON) < 9m? @ VGS=10V
    RDS(ON) < 13m? @ VGS=-4.5V
    Low density cell desig
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation

    MXN3050G應(yīng)用:

    Power switching application
    Hard switched and high frequency circuits
    Uninterruptible power supply

    MXN3050G典型應(yīng)用及引腳:

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