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單N-MOS

HY3010D/U/V TO-252-2L/TO-251-3L/TO-251-3S

    HY3010D,HY3010U,HY3010V是VDS=100V,ID=60A,RDS(ON)=10mΩ(typ.),@VGS=10V的N-Channel Enhancement Mode MOSFET.
    HY3010D,HY3010U,HY3010V提供TO-252-2L/TO-251-3L/TO-251-3S封裝.
    HY3010D,HY3010U,HY3010V概述:
        HY3010D,HY3010U,HY3010V是VDS=100V,ID=60A,RDS(ON)=10mΩ(typ.),@VGS=10V的N-Channel Enhancement Mode MOSFET.
        HY3010D,HY3010U,HY3010V提供TO-252-2L/TO-251-3L/TO-251-3S封裝.

    HY3010D,HY3010U,HY3010V特性:
    100V/60A
    RDS(ON)= 10mΩ(typ.) @VGS = 10V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen Free and Green Devices Available(RoHS Compliant)
    Package Code
    D: TO-252-2L
    U: TO-251-3L
    V: TO-251-3S
    Date Code
    YYXXXJWW G

    HY3010D,HY3010U,HY3010V應(yīng)用:
    Portable equipment and battery powered systems
    DC-DC Converters
    Switching application

    HY3010D,HY3010U,HY3010V
    典型應(yīng)用及引腳:

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