HY3010D,HY3010U,HY3010V概述:
HY3010D,HY3010U,HY3010V是VDS=100V,ID=60A,RDS(ON)=10mΩ(typ.),@VGS=10V的N-Channel Enhancement Mode MOSFET.
HY3010D,HY3010U,HY3010V提供TO-252-2L/TO-251-3L/TO-251-3S封裝.
HY3010D,HY3010U,HY3010V特性:
HY3010D,HY3010U,HY3010V提供TO-252-2L/TO-251-3L/TO-251-3S封裝.
HY3010D,HY3010U,HY3010V特性:
100V/60A
RDS(ON)= 10mΩ(typ.) @VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available(RoHS Compliant)
Package Code
D: TO-252-2L
U: TO-251-3L
V: TO-251-3S
Date Code
YYXXXJWW G
HY3010D,HY3010U,HY3010V應(yīng)用:
HY3010D,HY3010U,HY3010V應(yīng)用:
Portable equipment and battery powered systems
DC-DC Converters
Switching application
HY3010D,HY3010U,HY3010V典型應(yīng)用及引腳: