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    PE6968E是VDS=18V,ID=6A，RDS(ON)<18mΩ，@VGS=4.5V，RDS(ON)<19mΩ，@VGS=3.8V，RDS(ON)<27mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE6968E的絲印是6968E.PE6968E提供SOT-23-6L封裝.

    The PE6968E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

PE6968E特性：

VDS = 18V, ID = 6A

RDS(ON) < 18mΩ @ VGS=4.5V

RDS(ON) < 19mΩ @VGS=3.8V

RDS(ON) < 27mΩ @VGS=2.5V

ESD Rating: 4000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE6968E應(yīng)用：

Battery Protection

Load switch

PE6968E典型應(yīng)用及引腳：