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PE58120PA TO-263

    PE58120PA是VDS=85V,ID=120A，RDS(ON)<5.6m? @VGS=10V的N-Channel Enhancement Mode Power MOSFET.
    PE58120PA的絲印是PE58120P.PE58120PA提供TO-263封裝.
    The PE58120PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58120PA概述：
        PE58120PA是VDS=85V,ID=120A，RDS(ON)<5.6m? @VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58120PA的絲印是PE58120P.PE58120PA提供TO-263封裝.
        The PE58120PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58120PA特性：
    VDS = 85V, ID = 120A
    RDS(ON) < 5.6m? @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120PA應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE58120PA典型應(yīng)用及引腳：

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