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PE8270M PDFN3.3x3.3-8L

    PE8270M是VDS=18V,ID=90A，RDS(ON)<4.2m?，@VGS=4.5V，RDS(ON)<4.5m?，@VGS=3.8V，RDS(ON)<6.5m?， @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
    PE8270M的絲印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封裝.
    The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8270M概述：
        PE8270M是VDS=18V,ID=90A，RDS(ON)<4.2m?，@VGS=4.5V，RDS(ON)<4.5m?，@VGS=3.8V，RDS(ON)<6.5m?， @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
        PE8270M的絲印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封裝.
        The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8270M特性：
    VDS = 18V, ID = 90A
    RDS(ON) < 4.2m? @ VGS=4.5V
    RDS(ON) < 4.5m? @ VGS=3.8V
    RDS(ON) < 6.5m? @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8270M應(yīng)用：
    PWM applications
    Load switch

    PE8270M典型應(yīng)用及引腳：

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