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N+P-MOS

PED2312A UDFN2x2-6L

    PED2312A是N-Channel：VDS=20V，ID=3.5A，RDS(ON)<45m?@VGS=4.5V，RDS(ON)<60m?@VGS=2.5V；P-Channel：VDS=-20V，ID=-3A，RDS(ON)<80m?@VGS=-4.5V，RDS(ON)<110m?@VGS=-2.5V的N+P雙溝道MOSFET。
    PED2312A的絲印是D2312，PED2312A提供UDFN2x2-6L封裝。
    The PED2312A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED2312A概述：
        PED2312A是N-Channel：VDS=20V，ID=3.5A，RDS(ON)<45m?@VGS=4.5V，RDS(ON)<60m?@VGS=2.5V；P-Channel：VDS=-20V，ID=-3A，RDS(ON)<80m?@VGS=-4.5V，RDS(ON)<110m?@VGS=-2.5V的N+P雙溝道MOSFET。PED2312A的絲印是D2312，PED2312A提供UDFN2x2-6L封裝。
        The PED2312A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED2312A特性：
    N-Channel：
        VDS = 20V, ID = 3.5A
        RDS(ON) < 45m?@ VGS=4.5V
        RDS(ON) < 60m? @VGS=2.5V
    P-Channel
        VDS = -20V, ID = -3A
        RDS(ON) < 80m? @ VGS=-4.5V
        RDS(ON) < 110m? @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2312A應(yīng)用：
    PWM applications
    Power management

    PED2312A典型應(yīng)用及引腳：


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