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N+P-MOS

CST30G30F PDFN5060-8L

    CST30G30F是N-Ch：BVDSS=30V,RDSON=9.5mΩ,ID=30A;P-Ch：BVDSS=-30V,RDSON=16mΩ,ID=-30A的N+P雙通道快速切換Mosfets。提供PDFN5060-8L封裝。
    The CST30G30F is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST30G30F meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
    CST30G30F Description/描述：
        CST30G30F是N-Ch：BVDSS=30V,RDSON=9.5mΩ,ID=30A;P-Ch：BVDSS=-30V,RDSON=16mΩ,ID=-30A的N+P雙通道快速切換Mosfets。提供PDFN5060-8L封裝。
        The CST30G30F is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST30G30F meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

    CST30G30F Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST30G30F Product Summary/產(chǎn)品概覽：
    BVDSS
    RDSON
    ID

    30V

    9.5mΩ

    30A

    -30V

    16 mΩ

    -30A

    CST30G30F     PDFN5060-8L Pin Configuration/引腳配置：

    CST30G30F Test Circuit-N/測試電路-N:



    CST30G30F Test Circuit-P/測試電路-P:


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