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N+P-MOS

CST3020 TO252-4

    CST3020是N溝道:VDS=30V,RDSON=15mΩ,ID=20A;P溝道:VDS=-30V,RDSON=25mΩ,ID=-23A的N溝道和P溝道快速開關(guān)MOSFET。提供TO252-4封裝。
    The CST3020 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
    The CST3020 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
    CST3020是高性能互補的N溝道和P溝道MOSFET高細胞密度,提供卓越的RDSON和大部分門電荷同步降壓轉(zhuǎn)換器應(yīng)用。
    CST3020符合RoHS和綠色產(chǎn)品要求100%EAS保證全功能可靠性獲得批準(zhǔn)。
    CST3020 Description/概述:
        CST3020是N溝道:VDS=30V,RDSON=15mΩ,ID=20A;P溝道:VDS=-30V,RDSON=25mΩ,ID=-23A的N溝道和P溝道快速開關(guān)MOSFET。提供TO252-4封裝。
        The CST3020 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST3020 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
        CST3020是高性能互補的N溝道和P溝道MOSFET高細胞密度,提供卓越的RDSON和大部分門電荷同步降壓轉(zhuǎn)換器應(yīng)用。
        CST3020符合RoHS和綠色產(chǎn)品要求100%EAS保證全功能可靠性獲得批準(zhǔn)。

    CST3020 Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST3020 Product Summary/產(chǎn)品摘要:

    BVDSS
    RDSON
    ID
    30V
    15 mΩ
    20A
    -30V
    25 mΩ
    -23A

    CST3020 TO252-4 Pin Configuration/引腳配置:


    CST3020 Package information/封裝信息:


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