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N+P-MOS

UM4606 SOP8

    UM4606是一款N+P的雙溝道MOSFET.
    The UM4606 is the complementary enhancement mode power field effect transistor is produced using high cell density advanced trench technology to provide excellent RDS(ON).
    This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications

    UM4606概述：
        UM4606是一款N+P的雙溝道MOSFET.
        The UM4606 is the complementary enhancement mode power field effect transistor is produced using high cell density advanced trench technology to provide excellent RDS(ON).
        This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications

    UM4606特性：
    30V/7.0A, RDS(ON)=21m? @VGS=10V N_CH
    -30V/-6.0A, RDS(ON)=33m? @VGS=-10V P_CH
    30V/5.0A, RDS(ON)=34m? @VGS=4.5V N_CH
    -30V/-5.0A, RDS(ON)=38m? @VGS=-4.5V P_CH
    Super high design for extremely low RDS(ON)
    Exceptional on-resistance and Maximum DC current capability
    Full RoHS compliance
    SOP8 package design

    UM4606應用：
    High Frequency Point-of-Load Synchronous
    New working DC-DC Power System
    Load Switch

    UM4606引腳配置：

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