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MXN3349 DFN3x3

    MXN3349 is a P-channel enhanced mode power Mosfet with VDS=-30V, ID=-50A, RDS (ON) (Typ.)=5.8mΩ@VGS=-10V, RDS (ON) (Typ.)=8mΩ@VGS=-4.5V. Provide DFN3x3 packaging.
    The MXN3349 uses advanced trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
    MXN3349 Description:
        MXN3349 is a P-channel enhanced mode power Mosfet with VDS=-30V, ID=-50A, RDS (ON) (Typ.)=5.8mΩ@VGS=-10V, RDS (ON) (Typ.)=8mΩ@VGS=-4.5V. Provide DFN3x3 packaging.
        The MXN3349 uses advanced trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

    MXN3349 General Features:
    VDS=-30V, ID=-50A
    RDS(ON)(Typ.)=5.8mΩ@VGS=-10V
    RDS(ON)(Typ.)=8mΩ@VGS=-4.5V
    Advanced High Cell Density Trench Technology
    Low Gate Charge
    100% EAS Guaranteed
    Green Device Available

    MXN3349 Application:
    Power Management Switches
    Battery Protection Application

    MXN3349 Pinout:

    MXN3349 Ordering Information:
    Part Number
    StorageTemperature
    Package
    Devices Per Reel

    MXN3349

    -55°C to 150°C

    DFN3x3

    5000

    MXN3349 Test Circuit：






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