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S-P-MOS

HYG045P03LQ1C2 PPAK5*6-8L

    HYG045P03LQ1C2是VDS=-30V,RDS(ON)=3.8mΩ (typ.) @VGS=-10VRDS(ON)=6.2mΩ (typ.) @VGS=-4.5V,ID=-80A的P溝道增強Mosfet。提供PPAK5*6-8L封裝。
    HYG045P03LQ1C2 Description/描述:
        HYG045P03LQ1C2是VDS=-30V,RDS(ON)=3.8mΩ (typ.) @VGS=-10VRDS(ON)=6.2mΩ (typ.) @VGS=-4.5V,ID=-80A的P溝道增強Mosfet。提供PPAK5*6-8L封裝。
        
    HYG045P03LQ1C2 Features/特性:
    -30V/-80A
    RDS(ON)=3.8 mΩ (typ.) @VGS=-10V
    RDS(ON)=6.2mΩ (typ.) @VGS=-4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen- Free Devices Available

    HYG045P03LQ1C2 Applications/應用:
    Switching Application
    Power Management for DC/DC
    Battery Protection

    HYG045P03LQ1C2 Ordering Information/訂購信息:
    Package Type
    Unit
    Quantity
    PPAK5*6-8L
    Reel
    5000
    HYG045P03LQ1C2 TO252 Pin Configuration/引腳配置:
    HYG045P03LQ1C2 Avalanche Test Circuit/雪崩試驗電路:
    HYG045P03LQ1C2 Switching Time Test Circuit/開關(guān)時間測試電路:
    HYG045P03LQ1C2 Gate Charge Test Circuit/閘電荷測試電路:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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