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S-P-MOS

HYG210P06LQ1D/U/V TO-252-2L，TO-251-3L，TO-251-3S

    HYG210P06LQ1D/U/V是VDS=-60V,ID=-40A,RDS(ON)=19mΩ(typ.) @VGS=-10V,RDS(ON)=25mΩ(typ.) @VGS=-4.5V的P溝道Mosfet。提供TO-252-2L，TO-251-3L，TO-251-3S封裝。
    HYG210P06LQ1D/U/V Description/概述：
        HYG210P06LQ1D/U/V是VDS=-60V,ID=-40A,RDS(ON)=19mΩ(typ.) @VGS=-10V,RDS(ON)=25mΩ(typ.) @VGS=-4.5V的P溝道Mosfet。提供TO-252-2L，TO-251-3L，TO-251-3S封裝。

    HYG210P06LQ1D/U/V Feature/特性：
    -60V/-40A
    RDS(ON)=19mΩ(typ.) @VGS=-10V
    RDS(ON)=25mΩ(typ.) @VGS=-4.5V
    100% avalanche tested
    Reliable and Rugged
    Halogen Free and Green Devices Available(RoHS Compliant)

    HYG210P06LQ1D/U/V Applications/應用：
    Power Management in DC/DC
    Load switching.
    Motor control.

    HYG210P06LQ1D/U/V Pin Description：

    HYG210P06LQ1D/U/V Avalanche Test Circuit：

    HYG210P06LQ1D/U/V Switching Time Test Circuit：

    HYG210P06LQ1D/U/V Gate Charge Test Circuit：

    HYG210P06LQ1D/U/V Device Per Unit：
    Package Type
    Unit
    Quantity

    TO-252-2L

    Tube

    75

    TO-252-2L

    Reel

    2500

    TO-251-3L

    Tube

    75

    TO-251-3S

    Tube

    75
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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