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HY400P10LR1D/U/V TO-252-2L/TO-251-3L/TO-251-3S

    HY400P10LR1D/U/V是VDS=-100V,ID=-40A,RDS(ON)=42mΩ(typ.)@VGS=-10V,
    RDS(ON)=48mΩ(typ.)@VGS=-4.5V的P溝道增強(qiáng)型MOSFET.
    HY400P10LR1D/U/V提供TO-252-2L/TO-251-3L/TO-251-3S三種封裝。
    HY400P10LR1D/U/V概述：
        HY400P10LR1D/U/V是VDS=-100V,ID=-40A,RDS(ON)=42mΩ(typ.)@VGS=-10V,RDS(ON)=48mΩ(typ.)@VGS=-4.5V的P溝道增強(qiáng)型MOSFET.
        HY400P10LR1D/U/V提供TO-252-2L/TO-251-3L/TO-251-3S三種封裝。

    HY400P10LR1D/U/V特性：
    -100V/-40A
    RDS(ON)=42mΩ(typ.)@VGS=-10V
    RDS(ON)=48mΩ(typ.)@VGS=-4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen Free and Green Devices Available (RoHS Compliant)

    HY400P10LR1D/U/V應(yīng)用：
    Portable equipment and battery powered systems
    DC-DC Converters
    Motor control.

    HY400P10LR1D/U/V封裝示意圖：



    HY400P10LR1D/U/V典型應(yīng)用圖：

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