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S-P-MOS

MX2319 SOT23-3

    MX2319是VDS>=-18V,ID=-7A,RDS(ON)(Typ.)=17mΩ@VGS=-4.5V,RDS(ON)(Typ.)= 22mΩ@VGS=-2.5V的P溝道MOSFET.
    MX2319提供SOT23-3封裝。
    The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.
    This device is suitable for use as a load switching application and a wide variety of other applications.
    MX2319概述：
        MX2319是VDS>=-18V,ID=-7A,RDS(ON)(Typ.)=17mΩ@VGS=-4.5V,RDS(ON)(Typ.)= 22mΩ@VGS=-2.5V的P溝道MOSFET.
        MX2319提供SOT23-3封裝。
        The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.This device is suitable for use as a load switching application and a wide variety of other applications.

    MX2319特性：
    VDS >=-18V,ID=-7A
    RDS(ON)(Typ.)=17mΩ@ VGS=-4.5V
    RDS(ON) (Typ.)=22mΩ@VGS=-2.5V
    Asvanced trench MOSFET process technology
    Ultra low on-resistance with low gate charge

    MX2319應(yīng)用：
    PWM applications
    Load switch

    MX2319典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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