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MXND805概述：
    MXND805是VDS=-12V，ID=-8.5A，@VGS=-4.5V，RDS(ON)(Typ.)=14m?，@VGS=-2.5V，RDS(ON)(Typ.)=19m?，@VGS=-1.8V，RDS(ON)(Typ.)=29m?的P-Channel MOSFET.MXND805提供DFN2x2-6L封裝.
    The MXND805 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switching applications and a wide variety of other applications.

MXND805特性：
VDS =-12V，ID =-8.5A
@VGS=-4.5V RDS(ON)(Typ.)=14m?
@VGS=-2.5V RDS(ON)(Typ.)=19m?
@VGS=-1.8V RDS(ON)(Typ.)=29m?
Asvanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
New Thermally Enhanced DFN2X2-6L Package

MXND805應(yīng)用：
PWM applications
Load switch
battery charge in cellular handset

MXND805典型應(yīng)用及引腳圖：