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PE2319概述：
    PE2319是VDS>-18V,ID=-7A，RDS(ON)<21m?，@VGS=-4.5V，RDS(ON)<28m?，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE2319提供SOT-23-3L封裝.
    The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE2319特性：
VDS > -18V, ID = -7A
RDS(ON) < 21m? @VGS=-4.5V
RDS(ON) < 28m? @VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package

PE2319應(yīng)用：
PWM applications
Load switch
Power management

PE2319典型應(yīng)用及引腳：