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PE7190G DFN5x6-8L

    PE7190G是VDS=-18V,ID=-90A，RDS(ON)<2.4mΩ，@VGS=-4.5V，RDS(ON)<3.5mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7190G的絲印是PE7190G.PE7190G提供DFN5x6-8L封裝.
    The PE7190G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7190G概述：
        PE7190G是VDS=-18V,ID=-90A，RDS(ON)<2.4mΩ，@VGS=-4.5V，RDS(ON)<3.5mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7190G的絲印是PE7190G.PE7190G提供DFN5x6-8L封裝.
        The PE7190G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7190G特性：
    VDS = -18V, ID = -90A
    RDS(ON) < 2.4mΩ @ VGS=-4.5V
    RDS(ON) < 3.5mΩ @ VGS=-2.5V
    High Power and current handing capability
    Good stability and uniformity with high EAS
    Surface Mount Package

    PE7190G應(yīng)用：
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE7190G典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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