CST200N03G Description:
CST200N03G is a fast switching Mosfet for N-channel with BVDSS=30V, RDSON=1.6m Ω, and ID=200A. Provide TO263 packaging.
The CST200N03G is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST200N03G meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST200N03G Feature:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST200N03G Product Summary:
BVDSS
|
RDSON
|
ID
|
30V |
1.6mΩ |
200A |
CST200N03G TO263 Pin Configuration:
CST200N03G Test Circuit: