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CST30N06N TO252

    CST30N06N是BVDSS=60V,RDSON=24mΩ,ID=30A的N溝道快速切換Mosfets。提供TO252封裝。
    The CST30N06N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST30N06N meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST30N06N Description/描述:
        CST30N06N是BVDSS=60V,RDSON=24mΩ,ID=30A的N溝道快速切換Mosfets。提供TO252封裝。
        The CST30N06N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST30N06N meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST30N06N Features/特性:
    100% EAS Guaranteed 
    Green Device Available 
    Super Low Gate Charge 
    Excellent CdV/dt effect decline 
    Advanced high cell density Trench technology

    CST30N06N Product Summary/產(chǎn)品概覽:
    BVDSS
    RDSON
    ID

    60V

    24mΩ

    30A


    CST30N06N TO252 Pin Configuration/引腳配置:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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