CST60N02 Description:
CST60N02 is an N-channel Mosfet with BVDSS/20V, RDSON=4.7m Ω, ID=60A, and provides TO252-4R packaging
CST60N02 is an N-channel Mosfet with BVDSS/20V, RDSON=4.7m Ω, ID=60A, and provides TO252-4R packaging
The CST60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck
converter applications.
The CST60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST60N02 Features
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trenchtechnology
CST60N02 Product Summary
BVDSS
|
RDSON
|
ID
|
20V
|
4.7 mΩ
|
60A
|
CST60N02 Package M echanical Data TO 252 4R
CST60N02 Reel Spectification-TO-252-4R