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S-N-MOS

HYG013N03LS1C2 PDFN5*6-8L

    HYG013N03LS1C2 is an N-channel MOSFET with VDS=30V, ID=150A, RDS (ON)=1.3m Ω (typ.) @ VGS=10V, RDS (ON)=2.0m Ω (typ.) @ VGS=4.5V
    HYG013N03LS1C2 provides PDFN5 * 6-8L packaging
    HYG013N03LS1C2概述：
        HYG013N03LS1C2 is an N-channel MOSFET with VDS=30V, ID=150A, RDS (ON)=1.3m Ω (typ.) @ VGS=10V, RDS (ON)=2.0m Ω (typ.) @ VGS=4.5V
        HYG013N03LS1C2 provides PDFN5 * 6-8L packaging

    HYG013N03LS1C2特性：
    VDS=30V,ID=150A
    RDS(ON)=1.3mΩ(typ.)@VGS=10V
    RDS(ON)=2.0mΩ(typ.)@VGS=4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen- Free Devices Available

    HYG013N03LS1C2應(yīng)用：
    Switching Application
    Power Management for DC/DC
    Battery Protection

    HYG013N03LS1C2典型應(yīng)用電路及封裝圖：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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