SIO2622E概述:
SIO2622E is VDS=20V, ID=6A, RDS (ON) (m ?) Typ17@VGS =4.5V, RDS (ON) (m ?) Typ21@VGS =2.5V N-channel MOSFET The silk screen of SIO2622E is 2622E SIO2622E provides SOT-23 packaging
SIO2622E is VDS=20V, ID=6A, RDS (ON) (m ?) Typ17@VGS =4.5V, RDS (ON) (m ?) Typ21@VGS =2.5V N-channel MOSFET The silk screen of SIO2622E is 2622E SIO2622E provides SOT-23 packaging
SIO2622E是VDS=20V,ID=6A,RDS(ON)(m?)Typ17@VGS=4.5V,RDS(ON)(m?)Typ21@VGS=2.5V的N溝道MOSFET.SIO2622E的絲印是2622E.SIO2622E提供SOT-23封裝.
The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
SIO2622E特性:
VDS=20V ID=6A
RDS(ON)(m?)Typ17@VGS=4.5V
RDS(ON)(m?)Typ21@VGS=2.5V
ESD Rating:2000VBM
提供SOT-23封裝
SIO2622E原理圖及封裝圖: