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SIO2622E SOT-23

    SIO2622E is VDS=20V, ID=6A, RDS (ON) (m ?) Typ17@VGS =4.5V, RDS (ON) (m ?) Typ21@VGS =2.5V N-channel MOSFET The silk screen of SIO2622E is 2622E SIO2622E provides SOT-23 packaging
    The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. 
    This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
    SIO2622E概述:
        
    SIO2622E is VDS=20V, ID=6A, RDS (ON) (m ?) Typ17@VGS =4.5V, RDS (ON) (m ?) Typ21@VGS =2.5V N-channel MOSFET The silk screen of SIO2622E is 2622E SIO2622E provides SOT-23 packaging
        SIO2622E是VDS=20V,ID=6A,RDS(ON)(m?)Typ17@VGS=4.5V,RDS(ON)(m?)Typ21@VGS=2.5V的N溝道MOSFET.SIO2622E的絲印是2622E.SIO2622E提供SOT-23封裝.
        The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

    SIO2622E特性:
    VDS=20V ID=6A
    RDS(ON)(m?)Typ17@VGS=4.5V
    RDS(ON)(m?)Typ21@VGS=2.5V
    ESD Rating:2000VBM
    提供SOT-23封裝

    SIO2622E原理圖及封裝圖:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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