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S-N-MOS

HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2L

    HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N溝道增強(qiáng)型MOSFET.
    HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2LM HY4306P/B提供TO-220FB-3L/TO-263-2L封裝.
    HY4306P/B概術(shù)：
        HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N溝道增強(qiáng)型MOSFET.
        HY4306P/B提供TO-220FB-3L/TO-263-2L封裝.    HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2LM HY4306P/B提供TO-220FB-3L/TO-263-2L封裝.

    HY4306P/B特性：
    60V/230A
    RDS(ON)=2.6mΩ(typ.)@VGS=10V
    100% avalanche tested
    Reliable and Rugged
    Lead Free and Green DevicesAvailable(RoHS Compliant)

    HY4306P/B應(yīng)用：
    Switching application
    Power Management for Inverter Systems.

    HY4306P/B典型應(yīng)用電路及封裝圖：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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