MXD50N06概述：
MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V的N溝道MOS，MXD50N06提供TO-252封裝。
MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V的N溝道MOS，MXD50N06提供TO-252封裝。
The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .
Those devices are suitable for use in PWM, load switching and general purpose applications.
Those devices are suitable for use in PWM, load switching and general purpose applications.
MXD50N06特性：
VDS=60V, ID=50A
R DS(ON) (Typ.)=11.5mΩ @ VGS=10V
Ultra Low On-Resistance
High UIS and UIS 100% Test
MXD50N06應(yīng)用：
Power switching application
Load switch
MXD50N06訂購(gòu)信息:
MXD50N06訂購(gòu)信息:
| MXD50N06 ORDERING INFORMATION | |||
| Device | StorageTemperature | Package | Devices Per Reel |
| MXD50N06 | -55°C to 175°C | TO-252 | - |
MXD50N06典型應(yīng)用及腳位圖：
Business consulting
13823761625
Mail me