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MXB050N08概述：
    MXB050N08是VDS=85V,ID=120A，RDS(ON)(Typ.)=5.3mΩ，@VGS=10V的N溝道MOSFET.MXB050N08絲印是050N08.MXB050N08提供TO-263封裝.
    The MXB050N08 uses deep trench technology to provide excellent RDS(ON) and low gate
charge. It can be used in a wide variety of applications

MXB050N08特性：
VDS=85V, ID=120A
RDS(ON)(Typ.)=5.3mΩ @ VGS=10V
High Power and current handingcapability
Lead free product is acquired
Surface Mount Package

MXB050N08應(yīng)用：
Battery management
Motor controller and driver
UPS
PWM applications

MXB050N08典型應(yīng)用及引腳：