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MXN3060概述：
    MXN3060是VDS=30V,ID=80A，RDS(ON)(Typ.)5.0m?，@VGS=10V，RDS(ON)(Typ.)6m?，@VGS=-4.5V的N-Channel MOSFET.MXN3060提供DFN5X6-8L封裝.
    The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.

MXN3060特性：
VDS = 30V,ID = 80A
RDS(ON) (Typ.)5.0m? @ VGS=10V
RDS(ON) (Typ.)6m? @ VGS=-4.5V
Low density cell desig
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation

MXN3060應(yīng)用：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply

MXN3060典型應(yīng)用及引腳：