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JMTJ100N02A概述：
    JMTJ100N02A是VDS=20V,ID=8A,RDS(ON)<14mΩ,@VGS=4.5V,RDS(ON)<22.5mΩ,@VGS=2.5V的N-channel MOSFET.
    JMTJ100N02A的絲印是2010.JMTJ100N02A提供SOT23-3L封裝.

JMTJ100N02A特性：
VDS=20V, ID=8A
RDS(ON)< 14mΩ @ VGS =4.5V
RDS(ON)< 22.5mΩ @ VGS =2.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired

JMTJ100N02A應(yīng)用：
Load Switch
PWM Application
Power management

JMTJ100N02A典型應(yīng)用及引腳：