PE6986E概述：
PE6986E是VDS=18V,ID=6.5A，RDS(ON)<15mΩ，@VGS=4.5V，RDS(ON)<16mΩ，@VGS=3.8V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
PE6986E的絲印是6986E.PE6986E提供SOT-23-6L封裝.
PE6986E的絲印是6986E.PE6986E提供SOT-23-6L封裝.
The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE6986E特性：
PE6986E特性：
VDS = 18V, ID = 6.5A
RDS(ON) < 15mΩ @ VGS=4.5V
RDS(ON) < 16mΩ @VGS=3.8V
RDS(ON) < 20mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE6986E應(yīng)用：
PE6986E應(yīng)用：
Battery Protections
Load switch
PE6986E典型應(yīng)用及引腳：
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