PE58120P概述：
PE58120P是VDS=85V, ID=120A，RDS(ON)<5.4m? ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58120P的絲印是PE58120P.PE58120P提供TO-263封裝.
The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE58120P特性：
VDS = 85V, ID = 120 A
RDS(ON) < 5.4m? @VGS=10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE58120P應(yīng)用：
PWM applications
Load switch
Power management
PE58120P典型應(yīng)用及引腳：
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