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PE58200P TO-263

    PE58200P是VDS=85V,ID=200A，RDS(ON)<3.2m? ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.
    PE58200P提絲印是PE58200P.PE58200P提供TO-263封裝.
    The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58200P概述：
        PE58200P是VDS=85V,ID=200A，RDS(ON)<3.2m? ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200P提絲印是PE58200P.PE58200P提供TO-263封裝.
        The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58200P特性：
    VDS = 85V, ID = 200A
    RDS(ON) < 3.2m?  @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58200P應(yīng)用：
    PWM applications
    Load switch
    Power management

    PE58200P典型應(yīng)用及引腳：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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