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S-N-MOS

PE30100K TO252-2L

    PE30100K是VDS=30V,ID=100A，RDS(ON)<5.5m?，@VGS=10V，RDS(ON)<7m?，@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.
    PE30100K的絲印是30100K.PE30100K提供TO-252-2L封裝. 
  The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30100K概述：
        PE30100K是VDS=30V,ID=100A，RDS(ON)<5.5m?，@VGS=10V，RDS(ON)<7m?，@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.
        PE30100K的絲印是30100K.PE30100K提供TO-252-2L封裝.
        The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30100K特性：
    VDS = 30V, ID = 100A
    RDS(ON) < 5.5m? @ VGS=10V
    RDS(ON) < 7m? @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30100K應(yīng)用：
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PE30100K典型應(yīng)用及引腳圖：
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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