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PE8250M PDFN3.3x3.3-8L

    PE8250M是VDS=18V,ID=50A，RDS(ON)<4.2m?，@VGS=4.5V，RDS(ON)<6m?，@VGS=2.5V，RDS(ON)<10m?，@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
    PE8250M的絲印是PE8250M.PE8250M提供PDFN3.3x3.3-8L封裝.
    The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8250M概述：
        PE8250M是VDS=18V,ID=50A，RDS(ON)<4.2m?，@VGS=4.5V，RDS(ON)<6m?，@VGS=2.5V，RDS(ON)<10m?，@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
        PE8250M的絲印是PE8250M.PE8250M提供PDFN3.3x3.3-8L封裝.
        The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8250M特性：
    VDS = 18V, ID = 50A 
    RDS(ON) < 4.2m? @ VGS=4.5V 
    RDS(ON) < 6m? @ VGS=2.5V 
    RDS(ON) < 10m? @ VGS=1.8V 
    ESD Rating: 4000V HBM 
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package

    PE8250M應(yīng)用：
    PWM applications 
    Load switch 
    Power management 
    Battery Protection

    PE8250M典型應(yīng)用及引腳：

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